UHF Power LDMOS Transistor

Post date:2007-08-10 Expiry date:2007-11-11 [ Expired ]


Selling lead description: FEATURES * High power gain * Easy power control * Excellent ruggedness * Source on underside eliminates DC isolators, reducing Common mode inductance * Designed for broadband operation (HF to 800MHz) * Internal input damping for excellent stability over the Whole frequency range. APPLICATIONS * Communication transmitter applications in the HFto800MHz frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS Push-pull transistor in a SOT540A package with ceramic Cap. The common source is connected to the mounting Flange. QUICK REFERENCE DATA 600MHz, 28V, 120W, >14.5dB Welcome your enquiry! Price information:N/A Packing information:N/A Quantity:N/A

Member since: 2007-08-04 Country: China
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