High Frequency Semiconductor

Post date:2007-08-10 Expiry date:2007-11-11 [ Expired ]


Selling lead description: New and original The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applica-tions in 26 volt base station equipment. On-Die Integrated Input Match Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts Output Power, P1dB - 110 Watts (Typ) Power Gain @ P1dB -16.5 dB (Typ) Efficiency @ P1dB -53% (Typ) Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 100 Watts (CW) Output Power Excellent Thermal Stability Characterized with Series Equivalent Large-Signal Impedance Parameters Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Welcome your enquiry! Price information:N/A Packing information:N/A Quantity:N/A

Member since: 2007-08-04 Country: China
Contact details:
Tel: 86 755 25430700 Fax: 86 755 25430710 Website: Address: Room 1720, Yinglong Building, Cuishan 1st Rd, Luohu District, Shenzhen, Shenzhen, - China

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